Hole-mediated hydrogen spillover mechanism in metal-organic frameworks.

نویسندگان

  • Kyuho Lee
  • Yong-Hyun Kim
  • Y Y Sun
  • D West
  • Yufeng Zhao
  • Zhongfang Chen
  • S B Zhang
چکیده

Hydrogen spillover on carbon-based systems has been proposed as a viable alternative for room-temperature storage. Given the strength of the C-H bonds, however, it is unclear if spillover indeed takes place in such materials. We performed a first-principles study of H spillover on IRMOF-1. Spillover becomes thermodynamically stable only at high H coverage with a calculated Gibbs free energy of -14  kJ/mol at ambient condition. In general, however, spillover may not proceed due to high-energy states at lower H coverage. We propose that hole doping can substantially lower the energies as well as barriers to enable spillover at ambient conditions.

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عنوان ژورنال:
  • Physical review letters

دوره 104 23  شماره 

صفحات  -

تاریخ انتشار 2010